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PSMN5R6-100XS,127 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 100V 61.8A TO220F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PSMN5R6-100XS,127
- Description：MOSFET N-CH 100V 61.8A TO220F
- Series：-
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：61.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8061 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack, Isolated Tab
Single FETs, MOSFETs datasheet and documents for PSMN5R6-100XS,127
Single FETs, MOSFETs Overview
The PSMN5R6-100XS,127 is an N-channel enhancement mode MOSFET manufactured by Nexperia. It features a 100 V drain-source voltage rating and a continuous drain current of 100 A. The device exhibits a maximum on-resistance of 5.6 mΩ at a gate-source voltage of 10 V. It operates within a temperature range of -55 °C to +175 °C and utilizes a TO-220-3 package for through-hole mounting.
Single FETs, MOSFETs Feature Summary
- High current handling capability with low conduction losses
- Robust thermal performance for high power dissipation
- Enhanced mode operation for efficient switching control
Single FETs, MOSFETs Applications
- DC motor drives
- Power supply output stages
- Industrial motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix '127' against official Nexperia documentation to confirm the tube packaging format. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's latest datasheet or chemical content report before integration into regulated assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET requires high current capacity in a through-hole configuration. Ensure the application voltage remains below the 100 V breakdown limit and that the thermal design accommodates the specified power dissipation capabilities under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Nexperia Power MOSFET portfolio, designed for general-purpose power switching applications. The series offers a balance of low on-resistance and high current density, suitable for industrial and automotive environments requiring reliable through-hole mounting solutions.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with PSMN5R6-100PS,127 for identical electrical specifications and pinout compatibility. Verify package dimensions and thermal characteristics match the existing PCB footprint and heatsinking requirements.
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