PSMN6R3-120PS

$1.72

Description：MOSFET N-CH 120V 70A TO220AB
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk,Tube

SKU:350d9e15b8ba Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN6R3-120PS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 120V 70A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN6R3-120PS

Description：MOSFET N-CH 120V 70A TO220AB
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：120 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：207.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11384 pF @ 60 V
FET Feature：-
Power Dissipation (Max)：405W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for PSMN6R3-120PS

PSMN6R3-120PS

Single FETs, MOSFETs Overview

The Nexperia PSMN6R3-120PS is a standard level N-channel MOSFET housed in a TO-220AB (SOT78) package. It features a drain-source voltage of 120 V and a continuous drain current of 70 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.7 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 405 W under specified conditions. The component supports junction temperatures up to 175 °C and includes an internal source-drain diode with a reverse recovery time of 76.1 ns.

Single FETs, MOSFETs Feature Summary

High efficiency achieved through low switching and conduction losses
Improved dynamic avalanche performance for robust operation
Compatible with standard level gate drive sources
TO-220 package design facilitates direct heatsink mounting

Single FETs, MOSFETs Applications

AC-to-DC power supply
Synchronous rectification
Motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package variant and marking configuration. Confirm that the application environment remains within the absolute maximum ratings, particularly regarding junction temperature limits and thermal resistance requirements. Ensure the design accounts for the non-automotive qualification status if used in automotive contexts.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling and robust avalanche ruggedness in industrial or domestic power equipment. The standard level gate drive compatibility simplifies driver circuit design compared to logic-level alternatives. Evaluate thermal management strategies carefully, as the TO-220 package relies on external heatsinking to achieve its full power dissipation rating effectively.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's portfolio of silicon N-channel enhancement mode field-effect transistors utilizing TrenchMOS technology. It is designed for use in wide ranges of industrial, communications, and domestic power supply equipment. The product data sheet confirms production status and provides detailed electrical characteristics for circuit simulation and reliability assessment.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout configurations and thermal resistance values when replacing similar TO-220 MOSFETs to ensure mechanical and electrical compatibility without modifying the existing heatsink interface.

Single FETs, MOSFETs FAQ

Is the PSMN6R3-120PS qualified for automotive applications?

No, the product data sheet explicitly states that this specific Nexperia product is not automotive qualified and has not been tested according to automotive standards.