PSMN7R0-30MLC,115

Single FETs, MOSFETs Overview

The Nexperia PSMN7R0-30MLC,115 is a logic level enhancement mode N-channel MOSFET utilizing NextPower Superjunction technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 30 V and a maximum continuous drain current of 67 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 7.89 mΩ at VGS = 4.5 V and 6.05 mΩ at VGS = 10 V. Total gate charge is 8.2 nC at VGS = 4.5 V and 17.9 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to 175 °C with a total power dissipation of 57 W.

Single FETs, MOSFETs Feature Summary

• Optimized for 4.5V gate drive applications using NextPower Superjunction technology
• Low parasitic inductance and resistance inherent to the LFPAK33 surface mount package
• Ultra-low gate charge characteristics designed to maximize system efficiency across varying load conditions

Single FETs, MOSFETs Applications

• DC-to-DC converters
• Load switching
• Synchronous buck regulator

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component status remains active for new designs, as product lifecycles may change. Ensure the requested quantity aligns with standard packaging units defined by the manufacturer. Cross-reference the datasheet revision date against your design requirements to ensure parameter consistency.

Single FETs, MOSFETs Selection Notes

Select this component when a logic level gate drive capability near 4.5 V is required alongside high efficiency. The LFPAK33 package provides a thermal path through the mounting base connected to the drain. Verify that the application's peak current does not exceed the pulsed rating and that the gate drive voltage supports the desired RDS(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPower series, which employs superjunction technology to reduce switching losses. The LFPAK33 package is designed for surface mounting with a large exposed metal pad for thermal management. It serves as a solution for industrial, communications, and domestic equipment requiring compact, high-efficiency power switching.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 30 V rating, N-channel type, and LFPAK33 footprint. Verify that alternative devices support similar logic level gate drive voltages and have comparable thermal resistance values to maintain the original circuit's thermal performance.