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PSMN7R6-60BS,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 60V 92A D2PAK. Review the specifications below when checking this part for your BOM.
The PSMN7R6-60BS,118 is a standard level N-channel MOSFET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in a D2PAK (SOT404) surface-mount package. The device supports a drain-source voltage of 60 V and delivers a continuous drain current of 92 A at a mounting base temperature of 25 °C. Key electrical parameters include a maximum on-state resistance of 7.8 mΩ at VGS = 10 V and ID = 25 A. Total gate charge is typically 38.7 nC, with a non-repetitive avalanche energy rating of 110 mJ. The component operates within a junction temperature range of -55 °C to +175 °C.
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Select this component when a standard level gate drive interface is required alongside high current handling capabilities. The D2PAK package provides robust thermal performance suitable for industrial and communications equipment. Ensure the application voltage does not exceed the 60 V drain-source limit and verify that the gate drive signal aligns with the standard level threshold characteristics defined in the static data.
This device belongs to Nexperia's PSMN series of N-channel enhancement mode field-effect transistors. The series employs TrenchMOS technology to optimize the balance between conduction and switching losses. The PSMN7R6-60BS variant specifically targets applications requiring moderate voltage ratings with high current capacity in a surface-mount form factor designed for automated assembly.
Publicly confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers' devices.
No. Unless expressly stated in the data sheet, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements.
The non-repetitive drain-source avalanche energy (EDS(AL)S) is rated at 110 mJ under conditions of VGS = 10 V, TJ(init) = 25 °C, ID = 92 A, Vsup ≤ 100 V, and RGS = 50 Ω.
to ensure correct packaging configuration. Confirm RoHS compliance status via official documentation before integration. Check for any Product Change Notifications (PCNs) that may affect specifications or manufacturing sites. Validate thermal management requirements against the datasheet's power dissipation curves for your specific mounting base temperature conditions.
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