PSMN8R9-100BSEJ

$1.22

Description：MOSFET N-CH 100V 108A D2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:4f718b65ac3c Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN8R9-100BSEJ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 108A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN8R9-100BSEJ

Description：MOSFET N-CH 100V 108A D2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 1V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：160 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9488 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：296W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for PSMN8R9-100BSEJ

PSMN8R9-100BSEJ

Single FETs, MOSFETs Overview

The Nexperia PSMN8R9-100BSEJ is a SuperSOA N-channel enhancement mode MOSFET housed in a D2PAK (SOT404) package, qualified for junction temperatures up to 175 °C. It features a drain-source voltage of 100 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 8 mΩ at VGS = 10 V and ID = 25 A. Peak pulsed drain current reaches 419 A. Total power dissipation is rated at 296 W under specified conditions.

Single FETs, MOSFETs Feature Summary

SuperSOA technology provides robust linear-mode safe operating area performance for handling substantial inrush currents during turn-on events.
Avalanche rated with 100% testing capability to withstand non-repetitive drain-source avalanche energy.
Low RDSon minimizes I²R conduction losses while maintaining optimum efficiency when fully turned on.

Single FETs, MOSFETs Applications

Hot swap circuits
Load switch applications
Soft start implementations
E-fuse designs
Telecommunication systems based on a 48 V backplane or supply rail

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the component meets all required environmental standards and RoHS compliance levels before finalizing procurement decisions. Ensure compatibility with existing thermal management solutions given the high power dissipation ratings.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high surge current tolerance and low conduction losses in 100 V environments. Evaluate thermal resistance requirements carefully, as the device relies heavily on the mounting base for heat dissipation. Consider the gate charge characteristics when designing drive circuits for optimal switching performance and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPower Live series, focusing on high-performance standard level MOSFETs. The D2PAK package offers a balance between power handling capabilities and surface-mount convenience. It is designed to complement modern hot-swap controllers by providing the necessary ruggedness and efficiency for demanding power distribution tasks.