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The PTAB182002FC-V1-R0 is a dual-channel RF MOSFET utilizing LDMOS technology. It features a 28V drain-source breakdown voltage (Vds) and is housed in an H-37248-4 package. The device is designed for high-frequency radio frequency applications, offering robust performance within its specified electrical limits.
Verify the exact part number suffix against official MACOM documentation to ensure correct revision level. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement. Ensure storage and handling procedures align with the component's sensitivity specifications.
Select this component based on the requirement for dual-channel LDMOS performance at 28V breakdown. Evaluate the H-37248-4 package dimensions against PCB layout constraints. Consider thermal management requirements inherent to LDMOS devices in high-power RF scenarios.
MACOM Technology Solutions specializes in RF, microwave, and millimeter-wave solutions. This component belongs to their portfolio of discrete transistors designed for demanding wireless and industrial applications, supporting the company's focus on high-performance analog and RF integrated circuits.
Consult official MACOM substitution guides for verified alternatives. Cross-reference channel count, Vds rating, and package type when evaluating potential substitutes to maintain circuit integrity.