PTAC240502FCV1XWSA1

Description：RF MOSFET LDMOS 28V H-37248-4
Series：-

SKU:8378bd3f9b18 Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V H-37248-4
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：LDMOS
Frequency：2.62GHz ~ 2.4GHz
Gain：14.2dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：120 mA
Power - Output：50W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：H-37248-4
Supplier Device Package：H-37248-4
Configuration：-

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PTAC240502FCV1XWSA1

Overview

The PTAC240502FC is a thermally-enhanced high-power RF LDMOS FET designed for multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. It features an asymmetrical dual-path design with integrated input matching and operates at a drain voltage of 28 V. The device provides a typical linear gain of 14.3 dB and a drain efficiency of 44% under two-carrier WCDMA specifications. It includes integrated ESD protection compliant with Human Body Model Class 1B standards.

Feature Summary

Asymmetrical Doherty design with dedicated main and peak paths
Integrated input matching network
Thermally enhanced package with earless flanges
Integrated ESD protection

Applications

Multi-standard cellular power amplifiers
Two-carrier WCDMA systems
Single-carrier WCDMA systems

Procurement Notes

Verify the specific ordering suffix (e.g., V1) against the manufacturer's current datasheet revision, as packaging options such as tray or tape and reel may vary. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure handling precautions are observed due to the device being electrostatic discharge sensitive.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2300–2400 MHz range. The asymmetrical design supports Doherty architectures, making it suitable for signals with high peak-to-average ratios. Consider the thermal resistance and junction temperature limits when designing the heat dissipation strategy for the earless flange package.

Part Context

This part belongs to Infineon's portfolio of thermally-enhanced high-power RF LDMOS field-effect transistors. These devices utilize advanced LDMOS processes to deliver superior reliability and thermal performance compared to standard packages. The H-37248-4 package variant is specifically engineered for efficient mounting and heat transfer in high-density amplifier modules.