PTF141501E V1

Overview

The Infineon PTF141501E is a 150-watt GOLDMOS FET designed for Digital Audio Broadcast (DAB) applications. It operates in the 1450 to 1500 MHz band and supports 1600–1700 MHz frequencies. The device features a thermally-enhanced H-30260-2 package with full gold metallization for reliability. Key electrical parameters include a drain-source breakdown voltage of 65 V, an on-state resistance of 0.07 Ω, and a maximum junction temperature of 200 °C. At 1500 MHz and 28 V, it delivers a minimum output power of 150 W CW with 16.5 dB linear gain.

Feature Summary

• Thermally-enhanced packaging ensures optimal heat dissipation for high-power RF operations.
• Broadband internal matching simplifies circuit design across specified frequency bands.
• Integrated ESD protection meets Human Body Model Class 1 standards.
• Excellent thermal stability and low HCI drift ensure long-term device reliability.

Applications

• Digital Audio Broadcast (DAB) transmitters
• High-power RF amplification at 1500 MHz
• Broadband RF applications in the 1600–1700 MHz range

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified channels. Confirm datasheet revision status and package marking alignment before integration. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity. Validate thermal interface material compatibility with the H-30260-2 flange package for optimal performance.

Selection Notes

Select this component for DAB transmitter designs requiring high linearity and efficiency. Consider the 65 V drain-source breakdown voltage and 200 °C junction temperature limits for robust operation. Evaluate the need for broadband matching networks given the integrated internal matching capabilities. Assess thermal management requirements based on the 0.4 °C/W thermal resistance characteristic.

Part Context

This part belongs to Infineon's GOLDMOS family of LDMOS transistors, specifically engineered for high-power RF applications. It utilizes advanced semiconductor technology to deliver superior performance in broadcast environments. The device represents a specialized solution for digital audio broadcasting infrastructure, emphasizing reliability and thermal efficiency.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult Infineon technical support for potential alternatives if this specific model is unavailable.

FAQ

What is the maximum junction temperature for the PTF141501E?

The maximum junction temperature (TJ) is 200 °C.

Does the PTF141501E include ESD protection?

Yes, it features integrated ESD protection meeting Human Body Model Class 1 standards.

What is the typical gain at 1500 MHz?

The typical gain (Gps) at 1500 MHz is 16.5 dB.