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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V H-32259-2
- Series：GOLDMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.99GHz
- Gain：19dB
- Voltage - Test：28 V
- Current Rating (Amps)：1µA
- Noise Figure：-
- Current - Test：180 mA
- Power - Output：10W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：H-32259-2
- Supplier Device Package：H-32259-2
- Configuration：-
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Overview
The PTF180101S is a 10 W LDMOS RF power field-effect transistor designed for EDGE applications in the DCS/PCS band. It features internally-matched GOLDMOS technology with full gold metallization for reliability. The device operates at VDD = 28 V and IDQ = 180 mA, delivering an average output power of 4.0 W with 19.0 dB gain and 28% efficiency. In CW operation, it achieves 15 W output at P-1dB with 50% efficiency. It includes integrated Human Body Model Class 1 ESD protection.
Feature Summary
- Internally matched GOLDMOS FET architecture
- Integrated electrostatic discharge protection
- Excellent thermal stability characteristics
- Low HCI drift performance
Applications
- EDGE base station amplification
- DCS/PCS band signal processing
- WCDMA cellular infrastructure
- Broadband RF power amplification
Procurement Notes
Verify component authenticity through authorized Infineon channels. Confirm package marking matches datasheet specifications. Ensure handling precautions are followed due to ESD sensitivity. Validate supply voltage and thermal management requirements against application constraints before deployment.
Selection Notes
Select this component for high-power linear amplification requiring robust reliability. Consider its internal matching capabilities to simplify circuit design. Evaluate thermal resistance parameters for heat dissipation planning. Verify frequency range compatibility with target communication standards.
Part Context
This part belongs to Infineon's GOLDMOS family, utilizing advanced LDMOS technology. It is specifically engineered for mobile communication base stations. The device represents a solution for high-efficiency power amplification in wireless networks.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility without manufacturer confirmation. Check pinout and electrical parameter alignment carefully.
FAQ
What is the maximum drain-source breakdown voltage?
The Drain-Source Breakdown Voltage (V(BR)DSS) is specified as a minimum of 65 V.
Does the device include built-in ESD protection?
Yes, it features integrated ESD protection rated at Human Body Model Class 1 minimum.
What is the typical gate-source operating voltage?
The typical Operating Gate Voltage (VGS) is 3.2 V under standard test conditions.
