PTFA071701EV4R250XTMA1

Description：RF MOSFET LDMOS 30V H-36248-2
Series：-

SKU:d39398883edd Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 30V H-36248-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：765MHz
Gain：18.7dB
Voltage - Test：30 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：900 mA
Power - Output：150W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：2-FlatPack, Fin Leads
Supplier Device Package：H-36248-2
Configuration：-

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PTFA071701EV4R250XTMA1

Overview

The PTFA071701EV4R250XTMA1 is a 170-watt LDMOS FET designed for cellular power amplifiers in the 725 to 770 MHz frequency band. It features internal I/O matching and a thermally-enhanced ceramic open-cavity package (H-36248-2). Manufactured with Infineon's advanced LDMOS process, it provides excellent thermal performance and superior reliability. Key electrical characteristics include a drain-source breakdown voltage of 65 V, an operating gate voltage of 2.48 V typ, and a junction temperature rating of 200 °C.

Feature Summary

Thermally-enhanced packages that are Pb-free and RoHS-compliant
Broadband internal matching integrated into the device structure
Integrated ESD protection meeting Human Body Model Class 2 minimum standards
Excellent thermal stability with low HCI drift

Applications

Cellular power amplifiers in the 725 to 770 MHz frequency band
CDMA2000 applications at 770 MHz
Two-tone drive-up scenarios for RF testing
WCDMA measurements using 3GPP signals

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure handling precautions for electrostatic discharge sensitive devices are strictly followed during storage and assembly processes.

Selection Notes

Select this component for high-power RF applications requiring broadband internal matching within the specified frequency range. Evaluate thermal management requirements against the 0.38 °C/W thermal resistance rating. Consider the 65 V drain-source breakdown voltage when designing biasing circuits for 30 V operation environments.

Part Context

This part belongs to the PTFA071701E/F series of thermally-enhanced high power RF LDMOS FETs from Infineon Technologies. The 'V4' indicates the specific version revision, while 'R250' denotes the tape and reel shipping configuration containing 250 pieces per reel. The H-36248-2 package type identifies the slotted flange single-ended physical form factor.