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The PTFA071701FV4R250XTMA1 is a 170-watt LDMOS FET designed for cellular power amplifiers in the 725 to 770 MHz frequency band. It features internal I/O matching and a thermally-enhanced, ceramic open-cavity package (H-37248-2). Manufactured with Infineon's advanced LDMOS process, it provides excellent thermal performance and superior reliability. The device includes integrated ESD protection meeting Human Body Model Class 2 standards.
Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm that the specific ordering suffix matches the required earless flange package variant. Ensure handling procedures strictly follow electrostatic discharge sensitivity guidelines during storage and assembly to maintain device integrity.
Select this component for applications requiring high output power within the 725 to 770 MHz range. Evaluate thermal management requirements based on the specified junction temperature limits. Consider the earless flange package configuration for mounting compatibility. Verify system impedance matching against the device's internal broadband matching characteristics.
This part belongs to the PTFA071701 series of high-power RF LDMOS transistors. It shares core electrical specifications with the PTFA071701E but utilizes a distinct H-37248-2 earless flange package instead of the slotted flange design found in the E variant. Both variants target similar cellular infrastructure amplifier markets.
PTFA071701E V4 R250 XTMA1
The maximum drain-source breakdown voltage is 65 V.
No, the device features broadband internal matching.
The typical linear gain is 18 dB at 770 MHz under standard operating conditions.