PTFA080551E V1

Overview

The PTFA080551E is a 55-watt internally matched GOLDMOS FET designed for EDGE and CDMA applications in the 869 to 960 MHz band. It operates at VDD = 28 V with IDQ = 450 mA. At 960 MHz, it delivers 26 W average output power with 18 dB gain and 44% drain efficiency. The device features thermally-enhanced packaging and full gold metallization.

Feature Summary

• Broadband internal matching
• Integrated ESD protection
• Excellent thermal stability
• VSWR handling capability

Applications

• EDGE base stations
• CDMA base stations
• RF power amplification

Procurement Notes

Verify package type (30265 or 31265) against design requirements. Confirm RoHS compliance status. Check for future availability constraints noted by distributors. Ensure ESD handling precautions are observed during assembly.

Selection Notes

Select based on required frequency range within 869-960 MHz. Evaluate thermal management needs due to high power dissipation. Consider gate voltage requirements for biasing circuits. Match impedance networks to reference circuit specifications.

Part Context

Part of Infineon's GOLDMOS family of RF LDMOS transistors. Designed for high reliability in wireless communication infrastructure. Utilizes advanced packaging for improved heat dissipation compared to standard packages.

Replacement Considerations

PTFA080551F is an alternative variant with different package outline (earless flange). Verify mechanical fit and thermal interface compatibility before substitution.