PTFA080551F V1

PTFA080551F V1

$34.73
  • Description:RF MOSFET LDMOS 28V H-37265-2
  • Series:-

SKU:0705fe018e47 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-37265-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:18.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:600 mA
  • Power - Output:55W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:2-FlatPack, Fin Leads, Flanged
  • Supplier Device Package:H-37265-2
  • Configuration:-

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PTFA080551F V1

Overview

The PTFA080551F V1 is a 55-watt internally matched GOLDMO S ® FET designed for EDGE and CDMA applications within the 869 to 960 MHz band. It utilizes thermally-enhanced earless flange packaging (Package 31265) for optimal heat dissipation. The device features full gold metallization, integrated ESD protection meeting Human Body Model Class 2 standards, and RoHS compliance. Key electrical parameters include a drain-source breakdown voltage of 65 V, typical gain of 18 dB at 960 MHz, and operation at a drain voltage of 28 V.

Feature Summary

  • Broadband internal matching for simplified circuit design
  • Thermally-enhanced earless flange packaging for efficient heat transfer
  • Full gold metallization ensuring high reliability and extended lifetime
  • Integrated electrostatic discharge protection compliant with Human Body Model Class 2

Applications

  • EDGE cellular base station power amplification
  • CDMA2000 three-carrier base station power amplification
  • Broadband RF power amplifier stages in the 869-960 MHz range

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and availability status. Confirm that the component meets current environmental compliance requirements such as lead-free and halogen-free specifications before integration into production designs.

Selection Notes

Select this component for single-ended RF power amplifier designs requiring high thermal stability and low HCI drift. Ensure the application operates within the specified 28 V drain voltage and maintains case temperatures below the maximum junction rating to preserve performance and longevity.

Part Context

This part belongs to the GOLDMO S ® family of thermally-enhanced high-power RF LDMOS transistors manufactured by Infineon Technologies. It is specifically engineered for wireless communication infrastructure, offering robust performance in demanding mobile network environments.

Replacement Considerations

The PTFA080551E serves as a functional alternative with identical electrical characteristics but utilizes a slotted flange package (Package 30265) instead of the earless flange found on the PTFA080551F. Verify mechanical mounting constraints when substituting.

PTFA080551F V1PTFA080551F V1
$34.73
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