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The PTFA082201F V1 is a 220-watt LDMOS FET designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band. It features broadband internal matching and a thermally-enhanced earless flange package (H-37260-2). At 894 MHz with a 30 V drain supply, it delivers an average output power of 55 W in two-carrier WCDMA mode with 18.0 dB gain and 30% efficiency. Continuous wave performance reaches 250 W at P–1dB with 59% efficiency. The device includes integrated Human Body Model Class 2 ESD protection and maintains excellent thermal stability.
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm package variant H-37260-2 matches design requirements. Check datasheet revision history for discontinuation status and substitute part recommendations. Ensure handling procedures account for electrostatic discharge sensitivity during assembly.
Select this component for high-power RF applications requiring robust thermal management and linear amplification. Evaluate thermal resistance characteristics against system heat dissipation capabilities. Verify compatibility with 30 V operating voltage levels. Consider the earless flange package geometry for mechanical integration within the specific chassis constraints.
This LDMOS transistor belongs to Infineon's portfolio of high-power RF devices engineered for cellular infrastructure. It utilizes advanced silicon processes to achieve superior reliability and linearity compared to standard MOSFETs. The device supports demanding modulation schemes typical of third-generation mobile communication standards.
Consult official documentation for discontinued product notes regarding valid substitutes. Verify pinout compatibility and thermal interface dimensions before integrating alternative components.