PTFA092201E V1

Overview

The PTFA092201E V1 is an RF MOSFET transistor manufactured by Infineon Technologies. It utilizes silicon technology and belongs to the RFP-LDMOS GoldMOS family. The component is housed in an H-36260-2 package. This device is classified as an RF power MOSFET designed for high-frequency applications.

Feature Summary

• Utilizes silicon-based LDMOS technology for RF performance
• Designed for radio frequency power amplification
• Integrated into the GoldMOS product family

Applications

• RF power amplification circuits
• Radio frequency signal processing systems

Procurement Notes

Verify availability status directly with Infineon or authorized distributors, as supply conditions may vary. Confirm the exact suffix matches the required specification, as variations exist within the product line. Ensure compliance with RoHS directives if applicable to the specific revision. Check for any end-of-life notifications or limited supply warnings before finalizing procurement plans.

Selection Notes

Select this component based on its specific RF MOSFET characteristics and GoldMOS technology integration. Consider the H-36260-2 package constraints for PCB layout. Evaluate suitability for the intended radio frequency application requirements. Verify that the silicon technology aligns with the system's thermal and electrical needs.

Part Context

This part belongs to Infineon's portfolio of RF MOSFET transistors. It is distinct from automotive MOSFETs like the IAUCN series and digital controllers like the XDPE19284C. The PTFA092201E V1 is specifically engineered for radio frequency power applications rather than general-purpose switching or low-noise amplification tasks found in other Infineon lines.