PTFA142401ELV4R250XTMA1

PTFA142401ELV4R250XTMA1

$126.26
  • Description:RF MOSFET LDMOS 30V H-33288-2
  • Series:-

SKU:552243f0d09d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-33288-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.5GHz
  • Gain:16.5dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:2:00 AM
  • Power - Output:240W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-33288-2
  • Supplier Device Package:H-33288-2
  • Configuration:-

Download product information

PTFA142401ELV4R250XTMA1

Overview

The PTFA142401ELV4R250XTMA1 is a 240-watt LDMOS FET designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. It features internal I/O matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Feature Summary

  • Broadband internal matching
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift

Applications

  • DVB-T Drive-up
  • DVB applications
  • DAB applications

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm package type and shipping format. The 'EL' variant corresponds to the H-33288-2 package with a slotted flange, while the 'FL' variant uses the H-34288-2 package with an earless flange. Confirm RoHS compliance and gold plating specifications as stated in the datasheet.

Selection Notes

Select based on required package configuration: slotted flange (H-33288-2) or earless flange (H-34288-2). Ensure compatibility with 30 V drain supply voltage and 2 A quiescent current biasing. Verify thermal management requirements given the 0.28 °C/W junction-to-case thermal resistance at 240 W CW output power.

Part Context

This component belongs to Infineon's GoldMOS series of RF power MOSFET transistors. It is specifically engineered for high-power linear amplifier applications in the UHF band. The device utilizes silicon technology and is housed in a thermally enhanced ceramic package suitable for high-frequency operation.

Replacement Considerations

PTFA142401FLV4R250XTMA1

PTFA142401ELV4R250XTMA1PTFA142401ELV4R250XTMA1
$126.26
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