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The PTFA180701E-V4-R0 is a 70-watt LDMOS FET designed for GSM and EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted or earless flanges. Typical CW performance includes an output power at P–1dB of 72 W, gain of 15.5 dB, and efficiency of 59%. Typical EDGE performance provides an average output power of 44 dBm, gain of 16.5 dB, efficiency of 40.5%, and EVM of 2.0%.
Verify the specific package type required for your design, as the V4 version utilizes new package technologies compared to previous revisions. Confirm that the component meets Pb-free and RoHS-compliant standards if applicable to your manufacturing process. Ensure handling precautions are observed due to the device being electrostatic discharge sensitive. Cross-reference the ordering information to ensure the correct suffix matches your desired flange configuration.
Select this component for high-power RF applications requiring robust thermal management and reliable performance in the 1805-1880 MHz range. The integrated ESD protection and excellent thermal stability make it suitable for demanding environments. Consider the specific package type based on your board layout and cooling requirements. Verify compatibility with your biasing network and impedance matching circuits for optimal performance.
This part is manufactured using Infineon's advanced LDMOS process, providing superior reliability and thermal performance. It is part of a series of high-power RF transistors designed for cellular infrastructure. The V4 revision introduces updated package technologies while maintaining the core electrical characteristics of the PTFA180701 series.
Check for availability of PTFA180701E or PTFA180701F variants with different package types (H-36265-2 or H-37265-2) if the specific flange style differs from your current design. Ensure any substitute maintains the same voltage, current, and frequency specifications.