PTFA190451EV4R250XTMA1

PTFA190451EV4R250XTMA1

  • Description:RF MOSFET LDMOS 28V H-36265-2
  • Series:-

SKU:35c5fa1fe05f Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-36265-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.96GHz
  • Gain:17.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:450 mA
  • Power - Output:11W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-36265-2
  • Supplier Device Package:H-36265-2
  • Configuration:-

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PTFA190451EV4R250XTMA1

Overview

The PTFA190451EV4R250XTMA1 is a thermally-enhanced, internally matched LDMOS FET designed for cellular standards in the 1930 to 1990 MHz frequency band. It delivers 45 W output power with broadband internal matching and integrated ESD protection. The device operates at VDD = 28 V, providing typical linear gain of 17.5 dB and drain efficiency up to 60% under CW conditions. It features excellent thermal stability, low HCI drift, and capability to handle 10:1 VSWR.

Feature Summary

  • Broadband internal matching for simplified circuit design
  • Integrated ESD protection compliant with Human Body Model Class 2
  • Excellent thermal stability with low HCI drift characteristics
  • Robust performance capable of handling high VSWR loads

Applications

  • WCDMA base station drive-up applications
  • TD-SCDMA cellular infrastructure
  • Other cellular standards operating in the 1930–1990 MHz band

Procurement Notes

Verify component status as the datasheet indicates this product line is discontinued. Confirm availability through authorized Infineon distributors or secondary market channels. Ensure ordering suffixes match specific package requirements (e.g., slotted vs. earless flanges) as functional differences exist between variants.

Selection Notes

Select based on required frequency range within the 1930–1990 MHz specification. Consider thermal management capabilities given the 211 W total device dissipation rating. Evaluate package type (H-36265-2 vs H-37265-2) against PCB layout constraints. Verify biasing requirements align with the specified 28 V supply voltage.

Part Context

This component belongs to Infineon's thermally-enhanced LDMOS FET family optimized for RF power amplification. It utilizes advanced LDMOS process technology to ensure superior reliability and thermal performance compared to standard devices. The series supports high-power single-ended configurations for cellular base stations.

Replacement Considerations

Public confirmed substitute part numbers are not available due to the discontinued status of the PTFA190451E/F series. Designers must evaluate alternative LDMOS devices from current Infineon portfolios or other manufacturers that meet the 45 W power and 1930–1990 MHz frequency specifications.

PTFA190451EV4R250XTMA1PTFA190451EV4R250XTMA1

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