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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTFA190451EV4XWSA1 is a thermally-enhanced, internally matched LDMOS FET designed for cellular standards in the 1930 to 1990 MHz frequency band. It operates at VDD = 28 V with IDQ = 450 mA. Key RF characteristics include a typical gain of 17.5 dB and drain efficiency of 28% under two-carrier WCDMA conditions. The device delivers an average output power of 11 W and exhibits intermodulation distortion of -39 dBc. Maximum ratings specify a drain-source voltage of 65 V and a junction temperature up to 200 °C.
Verify component authenticity through authorized Infineon channels due to discontinued status. Confirm package variant (H-36265-2 or H-37265-2) matches design requirements. Ensure handling precautions are followed as the device is ESD sensitive. Review final datasheet revisions for any specific lifecycle constraints before integration into new systems.
Select this component for applications requiring robust thermal performance and reliable linearity in the 1930–1990 MHz range. Consider the integrated matching network to reduce external component count. Evaluate thermal resistance specifications against system cooling capabilities. Verify compatibility with 28 V supply rails and required bias currents for target modulation schemes.
This part belongs to Infineon's portfolio of thermally-enhanced high-power RF LDMOS transistors. These devices utilize advanced manufacturing processes to ensure superior reliability and consistent performance in demanding wireless communication environments. The product line supports various packaging options to accommodate different thermal management strategies.
The datasheet indicates the product is discontinued. No official substitute part numbers are provided in the source material. Designers should consult Infineon distributors for potential obsolescence management strategies or alternative solutions.