PTFA192001EV4R0XTMA1

Description：RF MOSFET LDMOS 30V H-36260-2
Series：-

SKU:07c72b6f582f Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 30V H-36260-2
Series：-
Mfr：Infineon Technologies
Package：Strip
Technology：LDMOS
Frequency：1.93GHz ~ 1.99GHz
Gain：15.9dB
Voltage - Test：30 V
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：1.6 A
Power - Output：200W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：2-Flatpack, Fin Leads, Flanged
Supplier Device Package：H-36260-2
Configuration：-

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PTFA192001EV4R0XTMA1

Overview

The PTFA192001EV4R0XTMA1 is a discontinued 200-watt LDMOS FET designed for single- and two-carrier WCDMA and CDMA applications within the 1930 to 1990 MHz frequency range. It features broadband internal matching and thermally enhanced packages with slotted or earless flanges. The device provides excellent thermal performance, superior reliability, and integrated ESD protection meeting Human Body Model Class 2 standards.

Feature Summary

Broadband internal matching for simplified circuit design
Thermally-enhanced package construction for high power dissipation
Integrated electrostatic discharge protection compliant with Human Body Model Class 2
Excellent thermal stability with low hot carrier injection drift

Applications

Single-carrier WCDMA base station amplifiers
Two-carrier WCDMA drive-up systems
CDMA cellular infrastructure applications

Procurement Notes

This component is officially marked as discontinued by Infineon Technologies. Verify current availability status through authorized distributors, as stock may be limited or subject to specific factory order conditions. Confirm that the H-36260-2 package variant matches your existing board layout requirements before proceeding with any procurement actions.

Selection Notes

Select this part for legacy designs requiring 200W output in the 1930–1990 MHz band. Ensure the system can accommodate the H-36260-2 package dimensions and thermal resistance characteristics. Verify that the 30V drain supply and 1.8A quiescent current biasing align with the amplifier's power supply architecture and thermal management capabilities.

Part Context

The PTFA192001E utilizes Infineon's advanced LDMOS process technology to deliver high linearity and efficiency in RF power amplification. It belongs to the GoldMOS family of thermally enhanced transistors, specifically engineered for robust operation in demanding wireless communication environments where signal integrity and thermal endurance are critical.