PTFA192001EV4R250XTMA1

Overview

The PTFA192001EV4R250XTMA1 is a discontinued 200-watt LDMOS FET designed for single- and two-carrier WCDMA and CDMA applications within the 1930 to 1990 MHz frequency range. Manufactured using Infineon's advanced LDMOS process, it features integrated input and output matching alongside thermally enhanced packages with slotted flanges. The device provides excellent thermal performance and superior reliability, supporting typical two-carrier WCDMA operation at 1990 MHz with 30 V drain voltage.

Feature Summary

• Broadband internal matching for simplified circuit design
• Thermally-enhanced package construction with slotted flange
• Integrated ESD protection meeting Human Body Model Class 2 standards
• Excellent thermal stability with low HCI drift characteristics

Applications

• Single-carrier WCDMA base station drive-up stages
• Two-carrier WCDMA power amplifier modules
• CDMA cellular communication systems
• General RF power amplification in the 1930–1990 MHz band

Procurement Notes

This component is officially classified as a discontinued product by Infineon Technologies. Availability is restricted to limited stock or factory special orders through authorized distributors. Verify current supply status directly with suppliers before integration into new designs due to end-of-life status.

Selection Notes

Select this part for legacy WCDMA/CDMA infrastructure requiring high linearity and thermal robustness in the 1930–1990 MHz range. Ensure compatibility with the H-36260-2 package footprint and verify that system bias requirements align with the specified 30 V drain voltage and gate control parameters.

Part Context

The PTFA192001E variant utilizes the H-36260-2 package, which is a thermally-enhanced slotted flange configuration. This specific package type distinguishes it from the earless flange H-37260-2 used in the PTFA192001F model. Both share identical electrical specifications but differ in mechanical mounting interfaces.

Replacement Considerations

PTFA192001F