PTFA192401EV4R250FTMA1

PTFA192401EV4R250FTMA1

$118.34
  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-

SKU:7aa0b5e56355 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.96GHz
  • Gain:16dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36260-2
  • Supplier Device Package:H-36260-2
  • Configuration:-

Download product information

PTFA192401EV4R250FTMA1

Overview

The PTFA192401EV4R250FTMA1 is a 240-watt LDMOS FET designed for single- and two-carrier WCDMA and CDMA applications within the 1930 to 1990 MHz frequency range. It features broadband internal matching, thermally enhanced packages with slotted or earless flanges, and integrated ESD protection meeting Human Body Model Class 2 standards. The device provides excellent thermal stability, low HCI drift, and capability to handle 5:1 VSWR at 30 V and 240 W CW output power.

Feature Summary

  • Broadband internal matching for simplified circuit design
  • Thermally enhanced package construction for superior heat dissipation
  • Integrated electrostatic discharge protection compliant with Human Body Model Class 2
  • High reliability with excellent thermal stability and low hot carrier injection drift

Applications

  • Single-carrier WCDMA drive-up systems
  • Two-carrier WCDMA base station amplifiers
  • CDMA application signal processing

Procurement Notes

Verify component authenticity through authorized Infineon distributors. Confirm RoHS compliance and Pb-free status prior to integration. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity. Validate package dimensions against H-36260-2 or H-37260-2 specifications as required by the specific variant.

Selection Notes

Select this component for high-power RF amplification in cellular infrastructure requiring robust thermal management. Evaluate thermal resistance characteristics relative to system cooling capabilities. Consider the integrated matching network benefits for reducing external component count. Verify compatibility with standard 30 V supply voltages and typical gate bias requirements.

Part Context

This part belongs to the PTFA192401 series of high-power RF LDMOS transistors manufactured using Infineon's advanced process technology. The series includes variants distinguished by package types, such as the slotted flange (E) and earless flange (F) configurations. These devices are engineered specifically for demanding wireless communication base station environments.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-reference package outlines and pin configurations carefully when evaluating alternatives.

PTFA192401EV4R250FTMA1PTFA192401EV4R250FTMA1
$118.34
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