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The PTFA192401EV4XWSA1 is a 240-watt LDMOS FET designed for single- and two-carrier WCDMA applications in the 1930 to 1990 MHz band. It features broadband internal matching and a thermally-enhanced H-36260-2 package with a slotted flange. The device operates at a drain-source voltage of 30 V, delivering an average output power of 47 dBm in typical two-carrier WCDMA mode and 49 dBm in single-carrier mode. It provides a linear gain of 16 dB and includes integrated ESD protection compliant with Human Body Model Class 2 standards.
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm that the specific ordering suffix matches the required package variant. Ensure handling procedures strictly follow electrostatic discharge precautions due to the sensitivity of the LDMOS technology. Validate compliance with RoHS and Pb-free requirements as specified in the official datasheet documentation.
Select this component for high-power RF amplifier designs operating within the 1930 to 1990 MHz frequency range. Ensure the design accommodates the 30 V drain supply and manages heat dissipation effectively using the provided thermal resistance data. Verify that the application requires the specific H-36260-2 package configuration and meets the necessary linearity and efficiency targets for WCDMA signals.
This part belongs to the PTFA192401 series of thermally-enhanced high-power RF LDMOS FETs manufactured by Infineon Technologies. It is specifically engineered for cellular infrastructure power amplification. The device utilizes advanced LDMOS process technology to achieve superior reliability and performance in demanding wireless communication environments.
PTFA192401FV4XWSA1 is the earless flange variant within the same family.