PTFA210701EV4T500XWSA1

PTFA210701EV4T500XWSA1

  • Description:RF MOSFET LDMOS 30V H-36265-2
  • Series:-

SKU:2eaef2728373 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-36265-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:16.5dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:550 mA
  • Power - Output:18W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-36265-2
  • Supplier Device Package:H-36265-2
  • Configuration:-

Download product information

PTFA210701EV4T500XWSA1

Overview

The PTFA210701EV4T500XWSA1 is a discontinued 70-watt LDMOS FET designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, it provides excellent thermal performance and superior reliability.

Feature Summary

  • Thermally-enhanced packages that are Pb-free and RoHS-compliant
  • Broadband internal matching for simplified circuit design
  • Integrated ESD protection meeting Human Body Model Class 2 minimum standards
  • Excellent thermal stability with low HCI drift

Applications

  • Single-carrier WCDMA power amplifiers
  • Dual-carrier WCDMA power amplifiers
  • Base station RF front-end modules

Procurement Notes

This component is officially marked as discontinued by Infineon Technologies. Verify current availability status through authorized distributors or secondary market suppliers. Confirm package type (H-36265-2 or H-37265-2) matches your existing board layout requirements before procurement.

Selection Notes

Select this device for high-power linear amplification in the 2110–2170 MHz range. Ensure thermal management solutions can handle the specified junction temperature of 200 °C and total device dissipation of 190 W. Verify compatibility with 30 V drain supply voltage and required gate bias conditions for optimal linearity and efficiency.

Part Context

Part of the PTFA210701E/F series of high-power RF LDMOS transistors. Designed specifically for cellular infrastructure base stations requiring high output power and linearity. The 'V4' suffix indicates the specific package version and manufacturing revision.

Replacement Considerations

No direct public substitute part numbers are listed in the datasheet. Consider consulting Infineon for updated product recommendations or evaluating alternative LDMOS families from other manufacturers with similar power and frequency specifications.

PTFA210701EV4T500XWSA1PTFA210701EV4T500XWSA1

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