PTFA210701EV4XWSA1

PTFA210701EV4XWSA1

  • Description:RF MOSFET LDMOS 30V H-36265-2
  • Series:-

SKU:00cd0cf436a8 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-36265-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:16.5dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:550 mA
  • Power - Output:18W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-36265-2
  • Supplier Device Package:H-36265-2
  • Configuration:-

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PTFA210701EV4XWSA1

Overview

The PTFA210701EV4XWSA1 is a discontinued 70-watt LDMOS FET designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Manufactured with Infineon's advanced LDMOS process, it features broadband internal matching and thermally-enhanced packages. Typical two-carrier WCDMA performance at 2140 MHz includes an average output power of 42 dBm, linear gain of 16.5 dB, efficiency of 27.0%, and intermodulation distortion of –37 dBc.

Feature Summary

  • Thermally-enhanced packages with slotted or earless flanges
  • Broadband internal matching
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift

Applications

  • Single-carrier WCDMA power amplifiers
  • Dual-carrier WCDMA power amplifiers
  • Base station RF front ends

Procurement Notes

This component is officially marked as discontinued by Infineon Technologies. Verify current availability status through authorized distributors or secondary market channels. Confirm package type compatibility (H-36265-2 or H-37265-2) and ensure handling precautions are followed due to ESD sensitivity. Review replacement options if long-term supply assurance is required.

Selection Notes

Select this device for legacy WCDMA base station designs operating within the 2110–2170 MHz range. It provides high linearity and efficiency suitable for dual-carrier applications. Ensure thermal management solutions match the specified RθJC of 0.92 °C/W. Consider alternative modern LDMOS devices if new product development requires active manufacturing support.

Part Context

Infineon's LDMOS portfolio targets high-power RF applications. The PTFA210701 series represents a mature technology optimized for cellular infrastructure. These components bridge the gap between discrete transistors and integrated modules, offering flexibility in custom amplifier design while maintaining robust reliability standards.

Replacement Considerations

PTFA210701E and PTFA210701F are direct functional equivalents differing only in package flange style. No other public substitutes are confirmed.

PTFA210701EV4XWSA1PTFA210701EV4XWSA1

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