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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V H-36260-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：LDMOS
- Frequency：2.14GHz
- Gain：15.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：10µA
- Noise Figure：-
- Current - Test：1.2 A
- Power - Output：35W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：H-36260-2
- Supplier Device Package：H-36260-2
- Configuration：-
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Overview
The PTFA211801E is a thermally-enhanced, 180-watt internally matched GOLDMOS FET designed for WCDMA applications. It operates from 2110 to 2170 MHz and supports single- and two-carrier configurations. Key electrical parameters include a drain-source breakdown voltage of 65 V, an on-state resistance of 0.05 Ω, and a junction temperature rating of 200 °C. The device provides a typical gain of 15.5 dB and efficiency up to 52% under CW conditions at 2170 MHz.
Feature Summary
- Broadband internal matching for simplified circuit design
- Thermally-enhanced packaging for optimal heat dissipation
- Full gold metallization ensuring high reliability and lifetime
- Integrated ESD protection meeting Human Body Model Class 2
Applications
- WCDMA base station power amplifiers
- Single-carrier WCDMA drive-up circuits
- Two-carrier WCDMA drive-up circuits
Procurement Notes
Verify the specific package variant required for the application. The 'E' suffix denotes Package 30260 (slotted flange), while 'F' denotes Package 31260 (earless flange). Confirm that the thermal interface and mounting hardware align with the selected package outline specifications before finalizing procurement.
Selection Notes
Select this component for high-power RF applications requiring robust thermal performance in the 2110–2170 MHz range. Ensure the biasing network accommodates the specified operating gate voltage and quiescent current. Verify that the system can handle the maximum total device dissipation and junction temperature limits during peak operation.
Part Context
This part belongs to Infineon's GOLDMOS family of LDMOS transistors. It is characterized specifically for 3GPP WCDMA signals. The datasheet includes reference circuit schematics and impedance data for integration into standard RF amplifier designs using Rogers TMM4 substrates.
Replacement Considerations
The PTFA211801F is the direct alternative differing only in package type (31260 vs 30260). No other cross-model replacements are documented in the provided source material.
FAQ
What is the maximum junction temperature?
The maximum junction temperature (TJ) is rated at 200 °C.
Does the device include internal matching?
Yes, the PTFA211801E features broadband internal matching.
What is the drain-source breakdown voltage?
The drain-source breakdown voltage (V(BR)DSS) is 65 V.
