PTFA211801EV5XWSA1

Overview

The PTFA211801EV5XWSA1 is a thermally-enhanced, 180-watt RF LDMOS FET designed for WCDMA applications in the 2110 to 2170 MHz band. It features broadband internal matching and integrated ESD protection. Key electrical parameters include a drain-source breakdown voltage of 65 V, an operating gate voltage of 2.5 V typ, and a junction temperature rating of 200 °C. In typical two-carrier WCDMA operation at 2140 MHz with 28 V supply, it delivers 45.5 dBm average output power, 15.5 dB linear gain, 27.5% efficiency, and -36 dBc intermodulation distortion.

Feature Summary

• Broadband internal matching eliminates external input and output matching networks
• Integrated electrostatic discharge (ESD) protection circuitry
• Excellent thermal stability with low hot carrier injection drift
• Capable of handling high voltage standing wave ratio loads

Applications

• Single-carrier WCDMA power amplifier stages
• Two-carrier WCDMA power amplifier stages
• Base station transmitter modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and shipping format. The datasheet indicates that the 'V5' version utilizes a slotted flange package and may be supplied in trays or tape and reel formats depending on the full part number extension. Ensure compatibility with existing thermal management designs due to the H-36260-2 package dimensions.

Selection Notes

Select this component for high-power RF amplification requiring robust thermal performance and simplified matching network design. The device is optimized for WCDMA signal processing within the specified frequency range. Consider the 65 V drain-source breakdown voltage when designing bias circuits and ensure the application environment supports the required case temperature conditions for optimal efficiency and linearity.

Part Context

This component belongs to Infineon's family of thermally-enhanced high-power RF LDMOS field-effect transistors. These devices are engineered using advanced silicon processes to provide superior reliability and thermal conductivity compared to standard packages. The H-36260-2 package variant offers a slotted flange configuration suitable for direct mounting to heat sinks in base station infrastructure.

Replacement Considerations

Consult official replacement guides for cross-reference data. Verify pinout compatibility and thermal resistance specifications before substituting.