PTFA212001EV4R250XTMA1

PTFA212001EV4R250XTMA1

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-

SKU:4f97899f2cb5 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:15.8dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36260-2
  • Supplier Device Package:H-36260-2
  • Configuration:-

Download product information

PTFA212001EV4R250XTMA1

Overview

The PTFA212001EV4R250XTMA1 is a discontinued 200-watt LDMOS FET designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. It features broadband internal matching, thermally-enhanced packages with slotted flanges, and integrated ESD protection (Human Body Model Class 2). Manufactured using Infineon's advanced LDMOS process, it provides excellent thermal stability and low HCI drift. The device operates at a drain-source voltage of 65 V and supports up to 200 W CW output power.

Feature Summary

  • Broadband internal input and output matching
  • Thermally-enhanced package with slotted flange design
  • Integrated electrostatic discharge protection

Applications

  • Single-carrier WCDMA power amplifiers
  • Two-carrier WCDMA power amplifiers
  • Broadband RF power amplification

Procurement Notes

This component is officially listed as discontinued by Infineon Technologies. Verify current availability status through authorized distributors or direct manufacturer channels before initiating procurement processes. Confirm that the specific ordering suffix matches the required package variant and ensure compliance with all handling precautions due to its sensitivity to electrostatic discharge.

Selection Notes

Select this component for high-power RF applications requiring robust thermal performance and linear gain within the 2110 to 2170 MHz frequency range. Ensure the design accommodates the H-36260-2 package dimensions and utilizes appropriate heat sinking to manage total device dissipation. Verify that the system can handle the specified maximum ratings, including the 65 V drain-source breakdown voltage and 200 °C junction temperature limit.

Part Context

The PTFA212001E belongs to Infineon's GoldMOS family of thermally-enhanced high-power RF LDMOS transistors. This series is engineered for demanding cellular infrastructure environments, offering superior reliability and consistent performance under high drive conditions. The 'V4' designation indicates a specific manufacturing revision, while the 'H-36260-2' package defines the physical footprint and thermal interface characteristics.

Replacement Considerations

The datasheet identifies the PTFA212001F as a related device featuring an earless flange package (H-37260-2) instead of the slotted flange found on the PTFA212001E. Both share identical electrical specifications and are discontinued. No other official substitute part numbers are documented in the provided source material.

PTFA212001EV4R250XTMA1PTFA212001EV4R250XTMA1

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