PTFA220081M-V4

Overview

The PTFA220081M V4 is an unmatched 8-watt High Power RF LDMOS Field Effect Transistor designed for power amplifier applications operating between 700 MHz and 2200 MHz. It features a PG-SON-10 overmolded plastic package with integrated ESD protection. The device delivers typical CW output power of 40 dBm at 940 MHz and 2140 MHz, with drain efficiencies reaching 59% and 50% respectively. It supports two-carrier WCDMA performance with 33 dBm average output power and -40 dBc ACPR. The transistor handles 10:1 VSWR at 28 V and 8 W CW output power.

Feature Summary

• Integrated electrostatic discharge (ESD) protection circuitry
• Excellent thermal stability characteristics
• Capable of handling high voltage standing wave ratio loads
• RoHS compliant and lead-free construction

Applications

• Power amplifiers in cellular base stations
• Broadband wireless communication systems
• Industrial, scientific, and medical equipment
• Test and instrumentation systems

Procurement Notes

Verify the component status before procurement as the datasheet explicitly states it is not recommended for new designs. Confirm that the ordering suffix V4 corresponds to the PG-SON-10 tape and reel shipping format containing 500 pieces. Ensure compatibility with existing PCB layouts utilizing the specified transmission line dimensions and reference circuit schematics provided in the documentation.

Selection Notes

Select this component for designs requiring robust RF performance across wide bandwidths from 700 MHz to 2200 MHz. Consider its high breakdown voltage and thermal resistance when designing heat dissipation strategies. Evaluate the gain and efficiency trade-offs at specific operating frequencies to optimize power consumption. Verify that the application environment does not require newer alternative technologies due to the obsolete status noted in the datasheet.

Part Context

This LDMOS FET belongs to the family of high-power radio frequency transistors manufactured by Infineon Technologies AG. It is specifically engineered for linear amplification in demanding RF environments. The device utilizes silicon technology housed in a compact surface-mount package suitable for automated assembly processes in modern electronic manufacturing.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. The datasheet explicitly marks the PTFA220081M as not recommended for new design. Engineers should consult manufacturer resources for current generation alternatives or perform rigorous validation if substituting with similar legacy components.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (TJ) rating for the PTFA220081M is 175 °C.

Does the device include built-in protection mechanisms?

Yes, the PTFA220081M includes integrated electrostatic discharge (ESSD) protection.

What is the recommended operating gate voltage?

The typical operating gate voltage (VGS) is 2.5 V when measured at a drain-source voltage of 28 V and a quiescent drain current of 100 mA.