PTFA240451E V1 R250

Overview

The PTFA240451E is a thermally-enhanced, internally-matched GOLDMOS FET designed for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. It operates at VDD = 28 V with IDQ = 450 mA. Key parameters include a drain-source breakdown voltage of 65 V, on-state resistance of 0.17 Ω, and junction temperature up to 200 °C. At 2450 MHz, it delivers 45 W average output power with 31% efficiency and -45 dBc ACPR in three-carrier CDMA2000 mode. Two-tone measurements at 2480 MHz show 40% efficiency and -30 dBc IMD.

Feature Summary

• Thermally-enhanced packaging provides optimal heat dissipation for high-power RF operations.
• Broadband internal matching simplifies circuit design across the target frequency range.
• Full gold metallization ensures excellent device lifetime and reliability under demanding conditions.

Applications

• Three-Carrier CDMA2000 base station amplification
• WiMAX system signal amplification
• IS-95 CDMA network infrastructure

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm package marking matches the H-30265-2 outline specifications. Ensure handling procedures strictly follow ESD sensitivity guidelines due to the electrostatic discharge sensitive nature of the device. Validate datasheet revision against current procurement orders.

Selection Notes

Select this component for broadband RF power amplification requiring high thermal stability and low HCI drift. The integrated matching network reduces external component count. Evaluate thermal management requirements carefully given the 196 W total device dissipation capability and specific derating curves above 25°C case temperature.

Part Context

This part belongs to Infineon's GOLDMOS family of LDMOS transistors. It utilizes the H-30265-2 slotted flange package designed for surface mounting. The technology focuses on combining high power density with robust reliability features suitable for wireless communication infrastructure.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should consult official Infineon resources for cross-reference information or updated product portfolio replacements.

FAQ

What is the maximum junction temperature for the PTFA240451E?

The maximum junction temperature (TJ) is specified as 200 °C.

Does the device include internal matching networks?

Yes, the PTFA240451E features broadband internal matching to simplify integration into RF circuits.

What is the typical adjacent channel power ratio (ACPR) for three-carrier CDMA2000?

The typical ACPR is -45 dBc when operating at 2450 MHz with 28 V supply and 450 mA quiescent current.