PTFA241301E V1

Overview

The PTFA241301E is a thermally-enhanced, internally matched GOLDMOS® FET designed for ultra-linear applications. It operates within the 2420 to 2480 MHz frequency range and supports CDMA, CDMA2000, Super3G, and WiMAX standards. The device features full gold metallization for reliability and integrated ESD protection. Key electrical parameters include a drain-source breakdown voltage of 65 V, an on-state resistance of 0.07 Ω, and a junction temperature rating of 200 °C. At 28 V supply and 2450 MHz, it delivers typical gain of 14 dB and efficiency of 25% under three-carrier CDMA2000 conditions.

Feature Summary

• Thermally-enhanced packaging with Pb-free and RoHS compliance
• Broadband internal matching for simplified circuit design
• Integrated Human Body Model Class 2 ESD protection
• Excellent thermal stability with low HCI drift

Applications

• Ultra-linear RF power amplification
• Three-carrier CDMA2000 base stations
• Super3G (3GPP TSG RAN) systems
• WiMAX operation

Procurement Notes

Verify component authenticity by checking markings against official datasheet specifications. Confirm package type matches H-30260-2 requirements. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Review thermal management guidelines to maintain junction temperatures within safe operating limits during installation and operation.

Selection Notes

Select this component for high-linearity RF applications requiring broadband performance in the 2.4 GHz ISM band. Consider the specific package variant based on mounting constraints, as the 'E' suffix denotes a slotted flange configuration. Evaluate thermal dissipation capabilities relative to the application's duty cycle and ambient cooling conditions to ensure optimal efficiency and longevity.

Part Context

This part belongs to Infineon's GOLDMOS® family of LDMOS transistors, specifically engineered for high-power RF amplification. The PTFA241301E utilizes advanced semiconductor technology to achieve superior linearity and power density compared to standard MOSFETs. Its design focuses on meeting the stringent demands of modern wireless communication infrastructure.

Replacement Considerations

The PTFA241301F serves as a functional alternative within the same series, distinguished primarily by its earless flange package (H-31260-2). Verify mechanical compatibility before substitution, as the physical mounting dimensions differ between the slotted and earless flange designs.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDSS) is rated at 65 V.

Does the device include built-in ESD protection?

Yes, the PTFA241301E includes integrated ESD protection capable of withstanding Human Body Model Class 2 discharges.

What is the typical gain at 2450 MHz?

Under typical three-carrier CDMA2000 test conditions at 2450 MHz, the linear gain is 14 dB.