PTFB090901EA-V2-R0

Overview

The PTFB090901EA-V2-R0 is an RF LDMOS FET manufactured by MACOM. It operates within the 920 MHz to 960 MHz frequency range. The device features a drain-source breakdown voltage of 65 V and a maximum operating temperature of +225 C. Key electrical parameters include a gain of 19.5 dB, an output power of 90 W, and a drain-source on-resistance of 123 mOhms. The gate-source voltage is rated at +10 V. It utilizes Silicon technology in an N-Channel configuration.

Feature Summary

• Utilizes Silicon-based LDMOS technology for high-frequency performance
• Designed for surface mount installation in SMD/SMT applications
• Provides high output power capability with significant gain

Applications

• RF power amplification in communication systems
• Broadband signal processing within specified frequency bands
• High-efficiency RF circuit design

Procurement Notes

Verify component authenticity through authorized channels as this part is marked as discontinued. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to maintain device integrity during assembly processes.

Selection Notes

Select this component for applications requiring operation between 920 MHz and 960 MHz. Consider the 65 V breakdown voltage and 90 W output power when designing matching networks. Verify thermal management capabilities to support the +225 C maximum operating temperature rating effectively.

Part Context

This RF MOSFET transistor belongs to MACOM's portfolio of radio frequency components. It is categorized under RF Power MOSFETs and falls within the broader MOSFets subcategory. The device is designed for robust performance in demanding RF environments.

Replacement Considerations

The product lifecycle status is listed as discontinued. Engineers should identify alternative RF LDMOS transistors from current MACOM lines or other manufacturers that match the 920-960 MHz frequency range and similar power specifications.