PTFB090901EA-V2-R250

PTFB090901EA-V2-R250

  • Description:RF MOSFET LDMOS
  • Series:*

SKU:7d483ae8a131 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS
  • Series:*
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
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  • Power - Output:-
  • Voltage - Rated:-
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  • Qualification:-
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PTFB090901EA-V2-R250

Overview

The PTFB090901EA-V2-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 920 MHz to 960 MHz frequency range and delivers a typical output power of 90 W with a gain of 19.5 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum operating temperature of +225°C. Packaged in the H-36265-2 surface-mount format, it utilizes silicon technology for high-power RF applications.

Feature Summary

  • High output power capability of 90 W for efficient signal amplification
  • Operates at frequencies between 920 MHz and 960 MHz
  • Robust thermal performance with a maximum junction temperature of +225°C

Applications

  • Base station power amplification
  • Broadband RF amplifier modules
  • Wireless communication infrastructure

Procurement Notes

Verify the specific suffix against official documentation, as variations may indicate different packaging or testing configurations. Confirm current availability status, as this component may be subject to limited supply or discontinuation notices. Ensure compatibility with existing PCB layouts and thermal management systems before procurement.

Selection Notes

Select this component for designs requiring high linearity and power density in the 900 MHz band. Evaluate the 65 V breakdown voltage against system requirements to ensure adequate headroom. Consider the SMD package type for automated assembly processes and verify thermal dissipation capabilities given the high operating temperature rating.

Part Context

This part belongs to MACOM's portfolio of RF power transistors designed for demanding wireless infrastructure environments. It represents a silicon-based solution optimized for cost-effective high-power amplification compared to GaN alternatives, targeting markets where robustness and established manufacturing processes are prioritized.

Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify pinout compatibility and thermal resistance parameters when evaluating alternative manufacturers' offerings to ensure seamless integration without circuit redesign.

PTFB090901EA-V2-R250PTFB090901EA-V2-R250

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