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The PTFB090901EA-V2-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 920 MHz to 960 MHz frequency range and delivers a typical output power of 90 W with a gain of 19.5 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum operating temperature of +225°C. Packaged in the H-36265-2 surface-mount format, it utilizes silicon technology for high-power RF applications.
Verify the specific suffix against official documentation, as variations may indicate different packaging or testing configurations. Confirm current availability status, as this component may be subject to limited supply or discontinuation notices. Ensure compatibility with existing PCB layouts and thermal management systems before procurement.
Select this component for designs requiring high linearity and power density in the 900 MHz band. Evaluate the 65 V breakdown voltage against system requirements to ensure adequate headroom. Consider the SMD package type for automated assembly processes and verify thermal dissipation capabilities given the high operating temperature rating.
This part belongs to MACOM's portfolio of RF power transistors designed for demanding wireless infrastructure environments. It represents a silicon-based solution optimized for cost-effective high-power amplification compared to GaN alternatives, targeting markets where robustness and established manufacturing processes are prioritized.
Consult official cross-reference data for direct substitutes. Verify pinout compatibility and thermal resistance parameters when evaluating alternative manufacturers' offerings to ensure seamless integration without circuit redesign.