PTFB090901FA-V2-R0

Overview

The PTFB090901FA-V2-R0 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 920 MHz to 960 MHz frequency range, delivering a typical output power of 90 W with a gain of 19.5 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum operating temperature of +225°C. Packaged in the H-36265-2 surface-mount format, it utilizes silicon technology for high-power RF applications.

Feature Summary

• High-efficiency RF power amplification using LDMOS technology
• Robust thermal performance supporting operation up to +225°C
• Designed for compact surface-mount integration

Applications

• Base station power amplification
• Industrial, Scientific, and Medical (ISM) equipment
• RF heating systems

Procurement Notes

Verify the specific suffix 'FA' against official MACOM documentation, as primary records indicate 'EA'. Confirm current lifecycle status, as similar variants are marked discontinued. Ensure compatibility with the H-36265-2 package footprint during procurement planning.

Selection Notes

Select this component for applications requiring high linearity and power density in the 900 MHz band. Evaluate thermal management requirements given the +225°C rating. Compare against other MACOM LDMOS devices for optimal impedance matching and biasing configurations.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for demanding wireless infrastructure. It complements other high-frequency components used in signal chain architectures, providing the necessary power handling capabilities for modern communication standards.

Replacement Considerations

Check for direct substitutes such as PTFB090901EA-V2-R0. Verify pinout and electrical parameter equivalence before substitution.