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The PTFB183404F-V2-R250 is an RF MOSFET utilizing LDMOS technology, designed for high-power radio frequency applications. It operates with a test voltage of 30 V and a test current of 2.6 A. The device provides a gain of 17 dB at a frequency of 1.88 GHz and delivers an output power of 80 W. It is housed in the H-37275-6 package.
Verify the specific datasheet version and manufacturer documentation to confirm technical specifications and operational limits. Ensure compatibility with system requirements before integration. Cross-reference part numbers carefully to avoid substitution errors. Consult official MACOM Technology Solutions resources for accurate handling and storage guidelines.
Consider the required operating frequency, gain, and output power when evaluating this component. Assess thermal management needs due to the 80 W output capability. Verify that the H-37275-6 package fits the design constraints. Confirm voltage and current ratings align with the application's electrical parameters.
MACOM Technology Solutions specializes in semiconductor components for wireless communications and data infrastructure. This RF MOSFET supports high-frequency signal amplification. LDMOS technology offers robust performance for demanding RF environments. The product line targets applications requiring reliable power amplification.
Public confirmed substitute part numbers are not available in the provided source material.