PTFB191501EV1R250XTMA1

Overview

The PTFB191501EV1R250XTMA1 is a discontinued 150-watt LDMOS FET designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. It features broadband internal matching, thermally-enhanced RoHS-compliant packaging with slotted flanges, and integrated ESD protection (Human Body Model Class 2). At 1990 MHz and 30 V, typical two-carrier WCDMA performance includes 35 W average output power, 18 dB linear gain, 30% efficiency, and -35 dBc intermodulation distortion. Typical CW performance at the same frequency yields 150 W output power at P–1dB with 55% efficiency.

Feature Summary

• Broadband internal input and output matching
• Thermally-enhanced package with slotted and earless flange options
• Integrated Human Body Model Class 2 ESD protection
• Increased negative gate-source voltage range for Doherty peaking amplifiers

Applications

• Single-carrier WCDMA base station amplifiers
• Two-carrier WCDMA base station amplifiers
• CDMA base station amplifiers
• Doherty peaking amplifiers

Procurement Notes

This component is officially listed as discontinued by Infineon Technologies. Availability is restricted to limited stock or factory special orders through authorized distributors. Verify current supply status directly with suppliers before design finalization. The datasheet revision history confirms discontinuation effective January 2015. Ensure compliance with handling precautions for electrostatic discharge sensitive devices during procurement and assembly.

Selection Notes

Select this device for RF power amplifier designs operating within the 1930 to 1990 MHz band requiring high linearity and thermal stability. The part supports both single-ended configurations via H-36248-2 and H-37248-2 packages. Consider the increased negative gate-source voltage range if utilizing Doherty amplifier architectures. Verify that the required output power and efficiency meet the specific application demands at 30 V drain bias.

Part Context

PTFB191501E belongs to Infineon's High Power RF LDMOS FET family, manufactured using advanced LDMOS process technology. It is paired with the PTFB191501F variant, which differs primarily in package style (earless vs. slotted flange). Both variants share identical electrical characteristics and are intended for cellular infrastructure base stations. The R250 suffix indicates tape and reel shipping configuration.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the product is discontinued, consult Infineon for recommended alternative components suitable for 1930–1990 MHz WCDMA/CDMA applications.