PTFB191501EV1XWSA1

Overview

The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Feature Summary

• Broadband internal matching
• Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
• Integrated ESD protection: Human Body Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift

Applications

• Single-carrier WCDMA
• Two-carrier WCDMA
• CDMA applications

Procurement Notes

Verify component status as the datasheet indicates these products are discontinued. Confirm availability through authorized distributors or secondary markets. Ensure handling precautions for electrostatic discharge sensitive devices are strictly followed during storage and assembly processes.

Selection Notes

Select based on required operating frequency within the 1930 to 1990 MHz range. Choose between Package H-36248-2 (slotted flange) or H-37248-2 (earless flange) depending on mechanical mounting constraints. Verify compatibility with 30 V drain supply and appropriate biasing networks for target linearity and efficiency metrics.

Part Context

These components belong to Infineon's high-power RF LDMOS transistor portfolio, specifically engineered for cellular base station power amplification. They utilize a thermally enhanced ceramic package design optimized for efficient heat dissipation under continuous wave and complex modulation conditions typical of wireless communication infrastructure.

Replacement Considerations

Public confirmed substitute part numbers only; omit otherwise.