PTFB192557SHV1XWSA1

Description：RF MOSFET LDMOS 28V H-34288-4
Series：-

SKU:f4a931bf2bc6 Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V H-34288-4
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：LDMOS
Frequency：1.99GHz
Gain：19dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.35 A
Power - Output：60W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：H-34288G-4/2
Supplier Device Package：H-34288G-4/2
Configuration：-

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PTFB192557SHV1XWSA1

Overview

The PTFB192557SH is a thermally-enhanced high-power RF LDMOS FET designed for Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. It provides 250 W output power at P1dB with 55% efficiency and 18.6 dB gain at 1990 MHz, 28 V. The device features integrated input/output matching, ESD protection, and low thermal resistance (0.232 °C/W). It operates with a drain-source breakdown voltage of 65 V and junction temperature up to 200 °C.

Feature Summary

Optimized for use as peak side transistor in Doherty amplifiers
Integrated input and output internal matching networks
Capable of handling 10:1 VSWR at 28 V, 250 W CW output power
Low thermal resistance for superior reliability

Applications

Doherty cellular power amplifier peak side applications
WCDMA base station power amplification
RF power generation in the 1930-1990 MHz band

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm package type H-34288G-4/2 matches design requirements. Check datasheet revision status as this part is not recommended for new designs. Ensure proper ESD handling precautions are observed during assembly due to electrostatic discharge sensitivity.

Selection Notes

Select this component for high-power RF applications requiring optimized Doherty amplifier performance in the 1930-1990 MHz range. Consider its 250 W output capability and 55% efficiency for power-sensitive designs. Evaluate thermal management needs given the 0.232 °C/W thermal resistance. Verify compatibility with existing matching networks due to integrated input/output matching characteristics.

Part Context

This LDMOS FET belongs to Infineon's high-power RF transistor portfolio, specifically engineered for telecommunications infrastructure. It utilizes advanced LDMOS process technology to deliver excellent thermal performance and reliability. The device represents a specialized solution for cellular base station power amplification, particularly suited for peak-side operation in complex amplifier architectures like Doherty configurations.