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Product Detailed Parameters
- Description：RF MOSFET LDMOS 30V H-34275G-6
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.99GHz
- Gain：19dB
- Voltage - Test：30 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：2.65 A
- Power - Output：80W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：H-34275G-6/2
- Supplier Device Package：H-34275G-6/2
- Configuration：Dual, Common Source
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Overview
The PTFB193408SV is a 340-watt symmetrical push-pull LDMOS FET designed for multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. It features broadband internal matching, high gain, and thermally-enhanced packaging. The device provides excellent thermal performance and superior reliability, manufactured with Infineon's advanced LDMOS process. Key electrical characteristics include a drain-source breakdown voltage of 65 V, an operating gate voltage range of 2.3 to 3.3 V, and a junction temperature limit of 200 °C. It is capable of handling 10:1 VSWR at 30 V and 340 W CW output power.
Feature Summary
- Broadband internal input and output matching
- Increased negative gate-source voltage range for improved Doherty amplifier performance
- Integrated ESD protection
- Excellent thermal stability
Applications
- Multi-standard cellular power amplifier applications
- Doherty amplifiers
- WCDMA base station transmitters
Procurement Notes
Verify component authenticity through authorized channels. Confirm RoHS compliance status. Ensure proper electrostatic discharge handling precautions are observed during storage and assembly. Check datasheet revision history for updates. Validate package specifications against design requirements.
Selection Notes
Evaluate thermal resistance and heat sink compatibility for high-power operation. Consider impedance matching network design for target frequency bands. Assess biasing circuitry requirements for optimal efficiency and linearity. Verify VSWR tolerance capabilities within system constraints.
Part Context
This component belongs to Infineon's high-power RF LDMOS transistor portfolio. It utilizes advanced LDMOS technology for robust performance in demanding RF environments. The H-34275G-6/2 ceramic open-cavity package facilitates efficient thermal management.
Replacement Considerations
The datasheet explicitly states this part is not recommended for new designs. Consult official documentation for current equivalent or successor components before implementation.
