PTFB193408SVV1XWSA1

Description：RF MOSFET LDMOS 30V H-34275G-6
Series：-

SKU:174bca0336d4 Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 30V H-34275G-6
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：LDMOS
Frequency：1.99GHz
Gain：19dB
Voltage - Test：30 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：2.65 A
Power - Output：80W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：H-34275G-6/2
Supplier Device Package：H-34275G-6/2
Configuration：Dual, Common Source

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PTFB193408SVV1XWSA1

Overview

The PTFB193408SV is a symmetrical push-pull LDMOS FET designed for multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. It delivers 340 W output power at 30 V drain-source voltage. The device features broadband internal matching, high gain, and excellent thermal stability within a thermally-enhanced package. Manufactured using Infineon's advanced LDMOS process, it provides superior reliability and handles 10:1 VSWR at full rated power.

Feature Summary

Broadband internal input and output matching
Symmetrical push-pull architecture
Increased negative gate-source voltage range
Integrated ESD protection

Applications

Multi-standard cellular power amplifiers
Doherty amplifier configurations
WCDMA base station transmitters

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revision status as this part is not recommended for new designs. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Validate packaging specifications against current supply requirements.

Selection Notes

Evaluate thermal management capabilities given the 0.2 °C/W junction-to-case resistance. Consider impedance matching networks based on provided source and load impedances. Assess suitability for specific modulation schemes requiring wide video bandwidth. Verify compatibility with existing driver stages and biasing circuits.

Part Context

This RF power transistor belongs to Infineon's high-power LDMOS portfolio. It utilizes an H-34275G-6/2 ceramic open-cavity package with formed leads. The device is optimized for efficiency and linearity in demanding wireless infrastructure environments.