PTFB212503FL-V2-R250

Overview

The PTFB212503FL-V2-R250 is an RF LDMOS FET from MACOM Technology Solutions, housed in the H-34288-4/2 surface-mount package. It operates at a frequency of 2.17 GHz with a maximum voltage rating of 65 V and a continuous drain current of 1.85 A. The device delivers an output power of 240 W and provides a gain of 18.1 dB. It supports a maximum operating temperature of +200°C and is supplied in tape and reel packaging.

Feature Summary

• High-power RF LDMOS transistor design for demanding applications
• Surface-mount construction in the H-34288-4/2 package
• Capable of delivering high output power at 2.17 GHz

Applications

• RF power amplification
• Wireless communication systems
• Broadband infrastructure equipment

Procurement Notes

Verify the exact part number suffix against official MACOM documentation to ensure correct packaging configuration. Confirm that the H-34288-4/2 package matches your PCB footprint requirements. Check for any specific handling instructions related to the high thermal performance and maximum operating temperature limits defined in the datasheet.

Selection Notes

Select this component when high output power and gain are required at 2.17 GHz. Ensure the system can accommodate the 65 V maximum voltage rating and the thermal management needs associated with the +200°C operating limit. Compare against other LDMOS devices if different package styles or frequency ranges are necessary.

Part Context

This device belongs to the MACOM PTFB series of RF MOSFETs. It is designed for high-efficiency power amplification in radio frequency applications. The H-34288-4/2 package facilitates surface-mount integration into high-density electronic assemblies requiring robust RF performance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult MACOM Technology Solutions directly for qualified alternatives or cross-reference options.