PTFB262406EV1XWSA1

Description：RF MOSFET LDMOS
Series：*

SKU:652fdf6bc84a Category: RF FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS
Series：*
Mfr：Infineon Technologies
Package：Tray
Technology：-
Frequency：-
Gain：-
Voltage - Test：-
Current Rating (Amps)：-
Noise Figure：-
Current - Test：-
Power - Output：-
Voltage - Rated：-
Grade：-
Qualification：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Configuration：-

Download product information

PTFB262406EV1XWSA1

Overview

The PTFB262406EV1XWSA1 is a thermally enhanced high-power RF LDMOS field-effect transistor manufactured by Infineon Technologies. It is designed for operation in the S-band, specifically covering frequencies from 2500 MHz to 2690 MHz. The device provides an output power of 200 watts and utilizes a flange mount package with a slotted earless design for superior thermal performance. Constructed using advanced LDMOS technology, it supports single- and two-carrier applications within this frequency range.

Feature Summary

Thermally enhanced package design with slotted earless flanges for improved heat dissipation
Advanced LDMOS process ensuring high reliability and superior thermal characteristics
Integrated input and output matching networks for simplified circuit integration

Applications

Single-carrier WCDMA power amplifier systems
Two-carrier WCDMA power amplifier systems
S-band RF signal amplification

Procurement Notes

Verify the specific suffix and revision code against the manufacturer's current datasheet to ensure compatibility with your design requirements. Confirm that the component meets all necessary environmental and safety standards for your target market before finalizing procurement decisions.

Selection Notes

Select this component when designing RF power amplifiers requiring 200W output in the 2500-2690 MHz range. Ensure the system layout accommodates the flange mount package and provides adequate thermal management solutions to maintain optimal junction temperatures during continuous operation.

Part Context

This part belongs to Infineon's family of thermally enhanced high-power RF LDMOS transistors. These devices are engineered for robust performance in demanding wireless communication infrastructure applications, offering a balance of high power density and thermal efficiency.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, thermal resistance, and electrical specifications.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.