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The PTFC210202FC-V1-R250 is a dual N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for high-frequency applications, this component operates within the 2.2 GHz frequency range. It features a drain-source breakdown voltage of 28 V and delivers an output power of 5 W with a gain of 21 dB. The device utilizes Silicon technology and is housed in an H-37248-4 surface-mount package. Key electrical specifications include a maximum operating temperature of +225°C and a gate-source voltage rating of +10 V. This transistor is classified under RF MOSFET transistors and supports SMD/SMT mounting styles.
Verify component authenticity through authorized MACOM distributors or certified suppliers. Confirm RoHS compliance status and check for recent Product Change Notifications (PCN) to ensure material consistency. Validate that the received part matches the H-37248-4 package specification and verify lot codes against current manufacturing records to avoid counterfeit risks.
Select this component when a dual-channel RF solution is required at 2.2 GHz with moderate power output. Ensure the system design accommodates the 28 V drain-source voltage limit and thermal management for +225°C operation. Compare gain requirements against the 21 dB specification to confirm suitability for the intended amplification stage.
This part belongs to MACOM's portfolio of RF MOSFET transistors, specifically targeting high-performance applications in telecommunications and defense sectors. It complements other LDMOS devices like the PTFC261402FC series, offering a specialized solution for 2.2 GHz operations where dual-channel functionality and compact surface-mount packaging are critical design constraints.
Consider the PTFC210202FC-V1-R0 as a potential variant with identical core specifications but different packaging options. Verify pinout compatibility and thermal characteristics before substitution. No direct cross-model substitutes are confirmed; consult MACOM engineering for equivalent performance alternatives.