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The PTFC261402FC-V1-R0 is a dual N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for high-power radio frequency applications, this silicon-based component operates within the 2.62 GHz to 2.69 GHz frequency range. It delivers an output power of 140 W with a gain of 18 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum operating temperature of +225°C. Packaged in the H-37248-4 surface-mount format, it supports SMD/SMT installation.
Verify current availability status as the component lifecycle is listed as obsolete. Confirm specific ordering requirements and lead times directly with authorized distributors or the manufacturer. Ensure compliance with RoHS standards and check for any product change notifications that may affect specifications before finalizing procurement decisions.
Select this component for applications requiring high output power at UHF frequencies. Consider the 65 V breakdown voltage and 140 W power capability when designing matching networks. Evaluate the H-37248-4 package dimensions for PCB layout constraints. Verify thermal management solutions to maintain junction temperatures within the specified +225°C limit during continuous operation.
This part belongs to MACOM's portfolio of RF MOSFET transistors designed for demanding environments. It serves the telecommunications, industrial, and defense sectors where reliable high-frequency performance is critical. The device represents a specialized solution for power amplification tasks requiring robust silicon-based semiconductor technology.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete lifecycle status, direct replacements should be identified through official MACOM engineering channels or comprehensive cross-reference databases.