PTRA082808NF-V1-R5

$46.98

Description：RF MOSFET LDMOS 48V 6HBSOF
Series：-

SKU:b218072ced42 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 48V 6HBSOF
Series：-
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：790MHz ~ 820MHz
Gain：15.5dB
Voltage - Test：48 V
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：200 mA
Power - Output：280W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：HBSOF-6-2
Supplier Device Package：PG-HBSOF-6-2
Configuration：Dual, Common Source

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PTRA082808NF-V1-R5

Overview

The PTRA082808NF-V1-R5 is a high-power RF LDMOS transistor manufactured by MACOM Technology Solutions. It operates within the 790 MHz to 820 MHz frequency range and delivers an output power of 280 W with a gain of 15.5 dB. The device features a drain-source breakdown voltage of 48 V and a gate-source voltage rating of 200 mA. Packaged in a PG-HBSOF-6-2 surface-mount configuration, it utilizes silicon technology for robust performance in demanding wireless transmission environments.

Feature Summary

Dual common source architecture for enhanced power handling
Thermally enhanced design optimized for next-generation wireless transmission
High-efficiency LDMOS construction for reliable RF signal amplification

Applications

Wireless base station infrastructure
Broadband communication systems
Public safety radio networks

Procurement Notes

Verify the complete part number including the suffix -V1-R5 to ensure correct packaging and revision level. Confirm that the application environment supports the specified 48 V drain voltage and thermal requirements. Cross-reference the PG-HBSOF-6-2 package dimensions with PCB layout specifications to ensure mechanical compatibility. Validate supplier authenticity through authorized distribution channels to guarantee component integrity.

Selection Notes

Select this component for applications requiring high linearity and power density in the 790-820 MHz band. Consider the dual common source topology for circuit design flexibility. Evaluate thermal management solutions due to the 280 W output capability. Ensure the driving stage can provide sufficient gain and impedance matching for optimal performance at the specified operating frequencies.

Part Context

This device belongs to MACOM's portfolio of high-performance semiconductor products designed for telecommunications and industrial sectors. It represents the company's expertise in RF and microwave technologies, specifically targeting wireless transmission markets. The product integrates advanced LDMOS processes to meet stringent efficiency and reliability standards for modern communication infrastructure.