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The PTRA083818NF-V1-R5 is an RF MOSFET transistor manufactured by Infineon Technologies, not MACOM Technology Solutions. It is a silicon N-Channel device designed for operation within the 733 MHz to 805 MHz frequency range. The component features a continuous drain current of 200 mA and a drain-source breakdown voltage of 105 V. It exhibits a typical gain of 18 dB and can deliver an output power of 275 W. The maximum operating temperature reaches +225 °C, and it utilizes an HBSOF-6-2 surface mount package.
Verify the manufacturer designation carefully, as this specific part number belongs to Infineon Technologies rather than MACOM. Confirm the exact suffix requirements for reel packaging quantities. Ensure compatibility with the HBSOF-6-2 footprint during PCB layout. Cross-reference datasheet revisions to confirm electrical characteristics match the intended design specifications.
Select this component when high output power and wide bandwidth are required in the 800 MHz range. Consider the 105 V breakdown voltage for robustness against voltage transients. Evaluate the 200 mA continuous current limit against thermal management capabilities. Verify that the N-Channel configuration aligns with the circuit topology requirements.
This device is categorized under RF Power MOSFET Transistors. It serves as a discrete semiconductor solution for radio frequency signal processing. The technology relies on silicon material properties to achieve high efficiency and power density in compact surface-mount packages suitable for modern electronic assemblies.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference tools or manufacturer catalogs for parametrically similar devices.