PTRA083818NF-V1-R5

PTRA083818NF-V1-R5

$71.94
  • Description:RF MOSFET LDMOS 48V 6HBSOF
  • Series:-

SKU:491024dbef84 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 48V 6HBSOF
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:733MHz ~ 805MHz
  • Gain:18.6dB
  • Voltage - Test:48 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:275W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:HBSOF-6-2
  • Supplier Device Package:PG-HBSOF-6-2
  • Configuration:-

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PTRA083818NF-V1-R5

Overview

The PTRA083818NF-V1-R5 is an RF MOSFET transistor manufactured by Infineon Technologies, not MACOM Technology Solutions. It is a silicon N-Channel device designed for operation within the 733 MHz to 805 MHz frequency range. The component features a continuous drain current of 200 mA and a drain-source breakdown voltage of 105 V. It exhibits a typical gain of 18 dB and can deliver an output power of 275 W. The maximum operating temperature reaches +225 °C, and it utilizes an HBSOF-6-2 surface mount package.

Feature Summary

  • High thermal stability with a maximum junction temperature rating of +225 °C
  • Capable of delivering high output power of 275 W in RF applications
  • Designed for broadband operation across the 733 MHz to 805 MHz spectrum

Applications

  • RF power amplification in cellular base stations
  • Broadband communication systems requiring high linearity
  • Industrial, Scientific, and Medical (ISM) equipment operating at 800 MHz bands

Procurement Notes

Verify the manufacturer designation carefully, as this specific part number belongs to Infineon Technologies rather than MACOM. Confirm the exact suffix requirements for reel packaging quantities. Ensure compatibility with the HBSOF-6-2 footprint during PCB layout. Cross-reference datasheet revisions to confirm electrical characteristics match the intended design specifications.

Selection Notes

Select this component when high output power and wide bandwidth are required in the 800 MHz range. Consider the 105 V breakdown voltage for robustness against voltage transients. Evaluate the 200 mA continuous current limit against thermal management capabilities. Verify that the N-Channel configuration aligns with the circuit topology requirements.

Part Context

This device is categorized under RF Power MOSFET Transistors. It serves as a discrete semiconductor solution for radio frequency signal processing. The technology relies on silicon material properties to achieve high efficiency and power density in compact surface-mount packages suitable for modern electronic assemblies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference tools or manufacturer catalogs for parametrically similar devices.

PTRA083818NF-V1-R5PTRA083818NF-V1-R5
$71.94
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