PTRA087008NB-V1-R5

PTRA087008NB-V1-R5

$97.86
  • Description:RF MOSFET LDMOS 48V 6HB2SOF
  • Series:-

SKU:128c96cf138f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 48V 6HB2SOF
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:755MHz ~ 805MHz
  • Gain:18.5dB
  • Voltage - Test:48 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:540 mA
  • Power - Output:650W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:HB2SOF-6-1
  • Supplier Device Package:PG-HB2SOF-6-1
  • Configuration:Dual, Common Source

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PTRA087008NB-V1-R5

Overview

PTRA087008NB-V1-R5 is a high-power RF LDMOS FET designed for multi-standard cellular power amplifier applications. It operates within the 755 MHz to 805 MHz frequency range and utilizes Wolfspeed advanced LDMOS technology. The device provides excellent thermal performance and reliability, featuring broadband internal input/output matching and integrated ESD protection.

Feature Summary

  • Broadband internal input and output matching
  • Asymmetric design with main P1dB of 245 W typical and peak P1dB of 380 W typical
  • Capable of handling 10:1 VSWR at 48 V with 30 W WCDMA output power
  • Integrated ESD protection

Applications

  • Multi-standard cellular power amplifiers

Procurement Notes

Verify the manufacturer origin carefully, as the part number indicates Wolfspeed/Cree manufacturing despite the MACOM Technology Solutions brand association in the query. Confirm RoHS compliance status and ensure the specific suffix matches the required reel or tape configuration for your assembly process. Cross-reference official datasheets to validate electrical parameters against current production batches.

Selection Notes

Select this component for base station applications requiring high linearity and efficiency in the 700-800 MHz band. The asymmetric design supports Doherty configurations, offering high output power with good efficiency. Ensure thermal management solutions are adequate given the high power density and verify that the operating voltage aligns with standard 48 V supply rails.

Part Context

This device belongs to the family of high-performance LDMOS transistors used in wireless infrastructure. Manufactured using advanced silicon LDMOS processes, it balances high power output with robust reliability. The integration of matching networks simplifies circuit design for engineers developing multi-band cellular amplifiers.

Replacement Considerations

Consult official cross-reference lists from Wolfspeed or MACOM for verified substitutes. Generic replacements may not match the specific asymmetric characteristics or internal matching requirements.

PTRA087008NB-V1-R5PTRA087008NB-V1-R5
$97.86
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