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The PTRA097008NB-V1-R2 is a high-power RF LDMOS field-effect transistor manufactured by MACOM Technology Solutions. Designed for the 920 to 960 MHz frequency band, this component delivers a typical pulsed continuous wave output power of 630 watts at P3dB. It operates with a nominal drain voltage of 48 volts and features broadband internal input and output matching networks. The device utilizes an asymmetric design optimized for multi-reference cellular power amplifier applications, offering high gain and thermal stability within a heat-enhanced package.
Verify the specific suffix against official documentation to confirm exact packaging or lot specifications. Confirm current availability status as supply conditions may vary. Ensure compatibility with existing thermal management solutions and biasing circuits designed for 48V operation. Cross-reference pinouts and mechanical dimensions with the latest datasheet before finalizing procurement orders.
Select this component for applications requiring high output power in the 920-960 MHz range. Consider its suitability for Doherty architectures due to its asymmetric design characteristics. Evaluate thermal requirements based on the specified 630W pulsed CW performance. Ensure the system impedance matches the internal matching network specifications provided in the technical data.
This part belongs to MACOM's portfolio of high-performance analog components for wireless infrastructure. It complements other RF transistors and signal conditioning devices used in modern cellular base stations. The LDMOS technology family offers a balance of power density and linearity required for contemporary communication standards.
Consult official cross-reference tools for parametrically similar parts. Verify that any substitute maintains the same frequency range, voltage rating, and power handling capabilities. Ensure mechanical footprint and thermal interface requirements are compatible with the existing design.