PTRA097008NB-V1-R2

PTRA097008NB-V1-R2

$92.73
  • Description:RF MOSFET LDMOS 50V 6HB2SOF
  • Series:-

SKU:8e11c48a7444 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V 6HB2SOF
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:920MHz ~ 960MHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:600 mA
  • Power - Output:630W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:HB2SOF-6-1
  • Supplier Device Package:PG-HB2SOF-6-1
  • Configuration:Dual, Common Source

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PTRA097008NB-V1-R2

Overview

The PTRA097008NB-V1-R2 is a high-power RF LDMOS field-effect transistor manufactured by MACOM Technology Solutions. Designed for the 920 to 960 MHz frequency band, this component delivers a typical pulsed continuous wave output power of 630 watts at P3dB. It operates with a nominal drain voltage of 48 volts and features broadband internal input and output matching networks. The device utilizes an asymmetric design optimized for multi-reference cellular power amplifier applications, offering high gain and thermal stability within a heat-enhanced package.

Feature Summary

  • High-power RF LDMOS technology providing robust thermal stability and operational safety
  • Broadband internal input and output matching for simplified circuit integration
  • Asymmetric design architecture supporting high gain performance in Doherty configurations

Applications

  • Multi-reference cellular base station power amplifiers
  • Doherty power amplifier configurations
  • High-efficiency RF signal generation in the 920-960 MHz band

Procurement Notes

Verify the specific suffix against official documentation to confirm exact packaging or lot specifications. Confirm current availability status as supply conditions may vary. Ensure compatibility with existing thermal management solutions and biasing circuits designed for 48V operation. Cross-reference pinouts and mechanical dimensions with the latest datasheet before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high output power in the 920-960 MHz range. Consider its suitability for Doherty architectures due to its asymmetric design characteristics. Evaluate thermal requirements based on the specified 630W pulsed CW performance. Ensure the system impedance matches the internal matching network specifications provided in the technical data.

Part Context

This part belongs to MACOM's portfolio of high-performance analog components for wireless infrastructure. It complements other RF transistors and signal conditioning devices used in modern cellular base stations. The LDMOS technology family offers a balance of power density and linearity required for contemporary communication standards.

Replacement Considerations

Consult official cross-reference tools for parametrically similar parts. Verify that any substitute maintains the same frequency range, voltage rating, and power handling capabilities. Ensure mechanical footprint and thermal interface requirements are compatible with the existing design.

PTRA097008NB-V1-R2PTRA097008NB-V1-R2
$92.73
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