PTVA035002EV-V1-R0

$338.89

Description：RF MOSFET LDMOS 50V H-36275-4
Series：-

SKU:31144d9e2003 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V H-36275-4
Series：-
Mfr：MACOM Technology Solutions
Package：Strip
Technology：LDMOS
Frequency：390MHz ~ 450MHz
Gain：18dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：500 mA
Power - Output：500W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：H-36275-4
Supplier Device Package：H-36275-4
Configuration：-

Download product information

PTVA035002EV-V1-R0

Overview

The PTVA035002EV-V1-R0 is an LDMOS FET designed for power amplifier applications in the 390 MHz to 450 MHz frequency band. It features high gain and is optimized for high-power RF performance within this specific VHF/UHF range.

Feature Summary

LDMOS technology construction
High gain characteristics
Optimized for power amplifier applications

Applications

Power amplifier modules
VHF/UHF broadcast systems
Base station amplifiers

Procurement Notes

Verify the exact suffix against official MACOM documentation, as variants like -R250 exist. Confirm RoHS compliance and MSL ratings with the manufacturer datasheet before integration. Ensure thermal management requirements align with the component's power dissipation specifications.

Selection Notes

Select this component for designs requiring robust LDMOS performance in the 390-450 MHz band. Evaluate thermal resistance and biasing requirements carefully. Compare gain and linearity metrics against alternative LDMOS devices from other manufacturers if system constraints differ.

Part Context

This part belongs to MACOM's portfolio of RF power transistors. It utilizes LDMOS technology, which is standard for high-efficiency power amplification in communication infrastructure. The device is distinct from lower-frequency or higher-frequency variants in the same family.