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The PTVA035002EV is a thermally-enhanced high power RF LDMOS FET designed for power amplifier applications in the 390 MHz to 450 MHz frequency band. It features a bolt-down flange package (H-36275-4) and provides excellent thermal performance with a junction temperature rating of 200 °C. The device delivers 500 W output power at 450 MHz under pulsed CW Class AB conditions (VDD = 50 V, IDQ = 0.5 A). Key electrical parameters include a typical gain of 18 dB, drain efficiency of 64%, and a maximum drain-source voltage of 105 V.
Verify the specific ordering code PTVA035002EVV1XWSA1 against the manufacturer's current datasheet revision history. Confirm that the H-36275-4 bolt-down package dimensions match the target PCB footprint. Ensure handling precautions are observed due to the device being an electrostatic discharge sensitive component.
Select this component when designing amplifiers requiring 500 W output power within the 390–450 MHz range. Consider the 0.20 °C/W thermal resistance for heat sink sizing. Evaluate the 105 V breakdown voltage against system supply requirements. Verify compatibility with the specified gate-source voltage limits and pulse width constraints.
This part belongs to Infineon's high-power RF LDMOS family, utilizing advanced process technology for superior reliability. It is distinct from standard MOSFETs by its specialized RF characteristics and impedance matching requirements. The device is intended for industrial and communication infrastructure rather than consumer electronics.
Consult official cross-reference lists for compatible devices. Verify that any substitute matches the H-36275-4 package outline and pin configuration (D1, D2, G1, G2, S). Ensure the replacement supports the required 500 W output power and 450 MHz operating frequency.